Brewster’s angle silicon wafer terahertz linear polarizer
نویسندگان
چکیده
منابع مشابه
Carbon nanotube terahertz polarizer.
We describe a film of highly aligned single-walled carbon nanotubes that acts as an excellent terahertz linear polarizer. There is virtually no attenuation (strong absorption) when the terahertz polarization is perpendicular (parallel) to the nanotube axis. From the data, the reduced linear dichrosim was calculated to be 3, corresponding to a nematic order parameter of 1, which demonstrates nea...
متن کاملHydrophobic silicon wafer bonding
Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...
متن کاملLecture 21: Silicon wafer manufacturing
The first step in integrated circuit (IC) fabrication is preparing the high purity single crystal Si wafer. This is the starting input to the fab. Typically, Si wafer refers to a single crystal of Si with a specific orientation, dopant type, and resistivity (determined by dopant concentration). Typically, Si (100) or Si (111) wafers are used. The numbers (100) and (111) refers to the orientatio...
متن کاملWide-angle near infrared polarizer with extremely high extinction ratio.
An infrared polarizer is designed with a predicted extremely high extinction ratio exceeding 3 × 10(16) and transmittance higher than 89% for one polarization in the wavelength region from 1.6 to 2.3 µm. Moreover, the performance does not start to deteriorate until 60° tilting angle. The wide-angle high transmission is attributed to the excitation of magnetic polaritons and suitable LC circuit ...
متن کاملTerahertz imaging of silicon wafers
Silicon samples with and without implanted layers have been imaged with a standard time-domain terahertz ~THz! imaging system. The carrier concentration and mobility of the substrate have been extracted from the frequency dependence of the THz transmittance using a simple model based on the Drude approximation. The carrier concentration of implanted layers could be determined simply from the re...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2011
ISSN: 1094-4087
DOI: 10.1364/oe.19.014099